# Losses in MOSFET

Currently I am working on an H-Bridge. To drive the MOSFETs on the H-Bridge, I have used PWM signals (5V). Voltage supply at MOSFET is 12V.

When I provide 5V PWM to the gate, the MOSFET heats up but if I provide 12V PWM (implemented by using comparator between controller and MOSFET) to the gate, then there is reduction in losses, MOSFET doesn't heat up too much.

My question then is: Will the reduction of the potencial difference between drain and gate result in reduction of switchihg losses or conduction losses? If so, why?

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Insufficient reading of datasheets. –  Ignacio Vazquez-Abrams May 26 '14 at 11:30

Clearly, you can expect that the on resistance will be lower when the gate voltage is higher. When the on-resistance is lower, for a given current, the power loss ($I^2R$) will be smaller.