As a learning exercise I'd like to try creating a random number generator using reverse-biased BJTs. As I understand it, if the emitter is saturated in reverse bias, occasionally electrons will tunnel through the band gap to the base pin.
- Can this be done with common BJTs or are special parts required?
- What sort of amplification will be required to actually detect this tunneling? I.e. at what voltage will the signal be on the base pin when an electron tunnels through?