I have a question related to the sub-threshold operation of MOSFETS.
Let's say I have the following setup:
How can I calculate the sub-threshold current ( Id when Vgs < Vgs(th) ) at Vgs = 0.5V using the data from the datasheet and data from the circuit?
Also what value will Rds have and what will be the value of Vout (Vds) at Vgs=0.5V?
I am very new to the domain of electronics so if I understand it correctly when Vgs < Vgs(th) the MOSFET will not be turned off completely but instead the "resistance" of the MOSFET (Rds) will be very high (in the range of MOhms) and there will be a very low drain leakage current (in the range of uAmps). I would like to know if there is a way to get a more precise calculation of this values (Id, Rds, Vds when Vgs < Vgs(th)) using only the available data from the datasheet and the circuit.