# Driving P-MOSFET with Netduino

I've read quite a lot of threads here about P-MOSFETS and how to drive them properly from IC but still have some questions.
Here's the schematic:

Some useful values from MOSFET datasheet
Vgs(th) -2..-4 V
Rds(on) ~0.07 Ohm
C ~1.5 nF

Schematic will be used to control a lot of common-anode RGB LEDs and current will be around 1A, so 60V/28A(max) MOSFET may be an overhead but that's what I got.
1. Will the schematic work as it is without NPN transistor controlling MOSFET gate?
2. Do I actually need current-limiting resistor to control Vgs or just the pull-up will do it?
3. Will MOSFET saturate on Vgs ~ -5V?
4. Will MOSFET close on Vgs ~ Vd - Vs = -1.7V?
5. How does the value of Pull-Up resistor affect how quickly I can switch MOSFET on/off (is 100Hz achievable?)

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5. Yes. The maximum switching cycle (turn-on + turn-off) for FQP27P06 is (45+380+70+190)=**685 nS**. Thus worst-case switching frequency is around 1.46 MHz (Vdd = 30 Volts, Rg = 25 Ohms). Allowing a hefty margin for the much lower Vdd = 5V and the 500 Ohm current limiting resistor, 15 KHz switching is definitely safe to aim for, much higher than the target of 100 Hz.