Why not to use a P-Channel MOSFET in this circuit? It makes more sense, to me since the MOSFET act as a resistor when turned on which is better then the constant volage drop of a PNP.

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Why not to use a P-Channel MOSFET in this circuit? It makes more sense, to me since the MOSFET act as a resistor when turned on which is better then the constant volage drop of a PNP.
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I suppose it could be made to work with a P-channel MOSFET, but I'm not sure what real advantage that would give. Is the voltage drop of about 0.2 volts over the transistor a problem? Probably not, and a P-channel MOSFET is likely more expensive than a PNP BJT, and this circuit is simple and works great. To highlight one design hurtle to using a MOSFET, what happens \$V_{self}\$ is less than \$V_{bus}\$, but not less enough to reach \$V_{th}\$ of your MOSFET and turn it on? Also, the gate would be driven though a resistor here. If \$V_{self}\$ fails, will you be able to drive the gate low enough and fast enough to maintain power? Not unsolvable problems by any means, but why bother thinking of them when the BJT works fine? |
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By looking at the circuit from a functionality point-of-view, your right, you could use a suitable P-Channel MOSFET, and you would get a lower voltage drop. However, there maybe other reasons why a PNP transistor was chosen (was this circuit designed for production?), such as price, availability, robustness (MOSFET gates are susceptible to punch-through), package size, or the fact it could of been designed 20 years ago. |
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I'd use a BC327-40* if the resultant base current required for the required transistor saturation was acceptable. If not then I'd use a P Channel MOSFET with appropriately low Rdson at the max required current and Vth low enough that it is adequately exceeded at all voltage conditions where operation is required. The MOSFET is capable of a lower loss circuit in most cases both because gate current is ~=0 and because Rdson can be so low on even a quite cheap device as to make it hard to match with a bipolar.
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