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Not to be confused with potential and potential difference......

Simply telling, "pulling below the ground" means taking the potential of collector below 0V. When the collector is at 0V there is 10V potential difference across the bulb. And this 10V allows the current of 100mA(indicated by the stamp in bulb) to flow through the collector (i.e Ic=100mA). But the implication of Ic=BIb gives you the value of 940mA which is higher than the current that we found when the potential difference is 10V. So, by the application of Ohm's Law, for higher current to flow through the component, either its resistance has to change, or potential difference must be increases. Since the resistance here is constant, the only way is to increase the potential difference. And you can see that the +ve terminal is fixed at 10V. So the transistor has to take its collector potential below 0V. This process of taking the potential below 0V is referred as 'taking below the ground'*

But the transistor is not capable of doing this,resulting in the saturation of transistor.

Hope this helps.....

Not to be confused with potential and potential difference......

Simply telling, "pulling below the ground" means taking the potential of collector below 0V. When the collector is at 0V there is 10V potential difference across the bulb. And this 10V allows the current of 100mA to flow through the collector (i.e Ic=100mA). But the implication of Ic=BIb gives you the value of 940mA which is higher than the current that we found when the potential difference is 10V. So, by the application of Ohm's Law, for higher current to flow through the component, either its resistance has to change, or potential difference must be increases. Since the resistance here is constant, the only way is to increase the potential difference. And you can see that the +ve terminal is fixed at 10V. So the transistor has to take its collector potential below 0V. This process of taking the potential below 0V is referred as 'taking below the ground'*

But the transistor is not capable of doing this,resulting in the saturation of transistor.

Hope this helps.....

Not to be confused with potential and potential difference......

Simply telling, "pulling below the ground" means taking the potential of collector below 0V. When the collector is at 0V there is 10V potential difference across the bulb. And this 10V allows the current of 100mA(indicated by the stamp in bulb) to flow through the collector (i.e Ic=100mA). But the implication of Ic=BIb gives you the value of 940mA which is higher than the current that we found when the potential difference is 10V. So, by the application of Ohm's Law, for higher current to flow through the component, either its resistance has to change, or potential difference must be increases. Since the resistance here is constant, the only way is to increase the potential difference. And you can see that the +ve terminal is fixed at 10V. So the transistor has to take its collector potential below 0V. This process of taking the potential below 0V is referred as 'taking below the ground'*

But the transistor is not capable of doing this,resulting in the saturation of transistor.

Hope this helps.....

1
source | link

Not to be confused with potential and potential difference......

Simply telling, "pulling below the ground" means taking the potential of collector below 0V. When the collector is at 0V there is 10V potential difference across the bulb. And this 10V allows the current of 100mA to flow through the collector (i.e Ic=100mA). But the implication of Ic=BIb gives you the value of 940mA which is higher than the current that we found when the potential difference is 10V. So, by the application of Ohm's Law, for higher current to flow through the component, either its resistance has to change, or potential difference must be increases. Since the resistance here is constant, the only way is to increase the potential difference. And you can see that the +ve terminal is fixed at 10V. So the transistor has to take its collector potential below 0V. This process of taking the potential below 0V is referred as 'taking below the ground'*

But the transistor is not capable of doing this,resulting in the saturation of transistor.

Hope this helps.....