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Feb 7, 2020 at 8:22 comment added Ken Grimes You can check chapter 10 of "Semiconductor Power Devices Physics, Characteristics, Reliability" from Lutz, Schlangenotto, Scheuermann and De Doncker or chapter 2 from "Insulated Gate Bipolar Transistor IGBT Theory and Design" from Khanna for instance. Oterwise you might want to open a new question, I can't add images to a comment and I need an image to explain it :)
Feb 6, 2020 at 19:16 comment added User Hostile Per your PS. I was referring to Figure 4 of this link. I don't fully understand why there would be a difference between the two devices electric field wise, unless punch-through occurs first along the left and right edges of the left diagram as a result of the geometry.
Feb 6, 2020 at 11:14 history answered Ken Grimes CC BY-SA 4.0