Timeline for What mechanism is responsible for the β/hFE variations in manufactured bipolar transistors?
Current License: CC BY-SA 4.0
8 events
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Aug 20, 2021 at 16:00 | comment | added | D.A.S. | If Rohm makes the tightest hFE ranges by bins of all suppliers and they can’t do it, assume the explanation is beyond our experience to understand. @MicroservicesOnDDD The same is true for Vt, Rdson, Vf, Rce which all have wide tolerances, unless they binned from a single wafer. It’s a 3D surface process and you are proposing a 1D solution that would destroy the substrate. | |
Aug 20, 2021 at 15:30 | comment | added | MicroservicesOnDDD | @TonyStewartEE75 -- The biggest reason in my eyes that "No that's not doable" is because the chip companies had to sell chips. Unless you provide hard evidence, I will assume you are providing a mantra handed down from one high priest to another. You're a physics guy, and I would like some physics reasons, please... | |
Aug 20, 2021 at 0:11 | comment | added | D.A.S. | No that’s not doable. @MicroservicesOnDDD better designs use current mirrors and resistor ratios with feedback | |
Aug 19, 2021 at 23:03 | comment | added | MicroservicesOnDDD | @TonyStewartEE75 -- Would Laser-trimming be a possible way to produce transistors having a particular beta with greater accuracy? For learning electronics, and building our own audio amplifiers, for instance, tighter beta control would allow more experimentation that might even produce more ic designs, as many circuits would be prototypable in discrete technology. I have an ic that I want to produce. | |
Feb 28, 2020 at 6:41 | comment | added | D.A.S. | base-emitter doping is the biggest factor for hFE which must be at least 10x more than collector-base doping. There are many process variables that affect this. | |
Feb 28, 2020 at 4:33 | answer | added | analogsystemsrf | timeline score: 3 | |
Feb 28, 2020 at 4:30 | history | edited | 比尔盖子 | CC BY-SA 4.0 |
typo in title
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Feb 28, 2020 at 4:22 | history | asked | 比尔盖子 | CC BY-SA 4.0 |