I have attached the following circuits which i have been developing overtime.
The OBJECTIVE is to get as high as possible a current at the gate of the MOSFET (VF1) to achieve faster pulse times of the LED.
My questions are:
-if there is any way to get higher currents at the MOSFET gate closest to the LED
-I am having trouble getting a higher voltage drop at the LED (VF2), adjusting the supply voltage VS1 has not contributed to increasing voltage across the LED
-the first circuit uses two mosfets and the second circuit uses an NPN/PNP BJT totem configuration to get higher current at the gate of the power MOSFET. Which of the two configurations should i pursue if my goal is to get faster switching at the MOSFET near the LED?
The circuit file is attached as well as the transient graphs. Any help/advice is welcome.