I commonly see weak pull down resistors at the base of NPN transistors. Many electronic sites even recommend doing such things, usually specifying the value as something like 10x the base current limiting resistor.
Bipolar transistors are current driven, so if the base is left floating, I see no need to pull it to ground.
Also, I commonly see gate current limiting resistors on FETs.
They are voltage driven and there is no need to limit current feeding the gate.
Are these two situations examples of people confusing the rules between transistors (which need base limiting resistors) and FETs (which need pull down resistors) or combining the rules or something...
or am I missing something here?