The question is about NAND flash chips used in all kinds of electronic devices and specifically the recent V-NAND chips. You can see what V-NAND is from http://en.wikipedia.org/wiki/Flash_memory#Vertical_NAND. The idea is that NAND flash cells are stacked on top of each other to increase areal capacities.
Now, Samsung has 32-layer V-NAND chips. According to my understanding, these chips should have 32 times greater capacities than ordinary NAND chips if manufactured using the same process node. True, the V-NAND chips are manufactured by using a bit older process node than the state of the art. According to http://www.extremetech.com/computing/194911-intel-announces-32-layer-3d-nand-chips-plans-for-larger-than-10tb-ssds, Samsung uses 40nm process node for V-NAND, whereas Samsung's state-of-the-art ordinary NAND chips are manufactured using the 19nm process node.
Even taking this into account, 32*(19 nm/40 nm)^2 is approximately 8. Thus, we should have 8 times greater capacities for V-NAND than for ordinary NAND. Considering that one can obtain 1-terabyte SSDs that contain traditional NAND chips, why can't one find any 8-terabyte SSDs that contain V-NAND chips? And similarly, why haven't smartphone and tablet memory sizes become 8 times greater after V-NAND was invented?