One might wish to switch DC through a transformer with an H-bridge. I'm leaving out antiparallel diodes and snubber caps, for simplicity.
One issue with this approach is that the upper FETs need isolated gate drives, referenced to the windings of the transformer. This can increase the cost and complexity of the system substantially. It occurs to me that one might use SCRs in place of the upper transistors.
SCRs will have higher losses than FETs, and they consume more drive current, but they're substantially easier to drive and harder to kill, and cheaper at high voltages and currents. At high voltages and currents, one might use IGBTs instead of FETs, which would have losses more comparable to those of SCRs. SCRs would require separate antiparallel diodes.
Will this work? Is it done? Am I missing some critical flaw?