I am slightly confused in deciding decoupling/bypass capacitor for DDR2 power supply pins. Some recommendations mention using 100nF and some mention using 10nF. I know that lower capacitance is more effective at higher frequency, but when I think of functions of bypass capacitor, I also think about the sudden requirement of charge during switching, where I believe 100nF can be more stable compared to 10nF (as it can store more charge for more time) in maintaining a steady voltage. Am I correct in my understanding?
I am using a single/discrete DDR2 RAM IC from Samung.
Any advice would be much appreciable.