I'm using low power MOSFETs (N channel-STP4NK60ZFP and P channel- IRF9530). The aim is to build a demo kit for students to study the thermal characteristics of MOSFET at variable frequencies and duty cycles. P channel : threshold voltage = -4V ;Drain current (at 25 deg C) = -12 A N channel : Vt = -4.5 V , Id= 4 A
With a supply voltage of 9 V(sorry ,not 12v) and gate voltage of 10 v, i'm trying to heat up the transistor as fast as I can to save time. I'm using a higher watt resister. But what should be the value of the resister in order to heat up both the transistors?