I wanted to know the relationship between the band gap (Eg) of the p/n regions in a diode and the built in potential in equilibrium.
My intuition says that Eg = e*Vo. I did a small calculation for silicon at T=300K. I got the relation to be approximately correct.
Looking at the band gap diagram, the valence band of the p side seems to coincide with the conduction band of the n side in equilibrium.
Is my intuition correct? What is the actual relationship?