The reason I ask this question is because the statement in this wiki page. It says
The common-emitter current gain is represented by \$\beta_F\$ or the h-parameter \$h_{fe}\$; it is approximately the ratio of the DC collector current to the DC base current in forward-active region. It is typically greater than 50 for small-signal transistors but can be smaller in transistors designed for high-power applications.
Another important parameter is the common-base current gain, \$\alpha_F\$. The common-base current gain is approximately the gain of current from emitter to collector in the forward-active region. This ratio usually has a value close to unity; between 0.98 and 0.998. It is less than unity due to recombination of charge carriers as they cross the base region. Alpha and beta are more precisely related by the following identities (NPN transistor):
So I want to ask in common emitter or collector, can I use \$\alpha_F\$ as well as using \$\beta_F\$ in common base or collector