I've skimmed through several sparse articles online about hysteresis in a MOSFET's I-V characteristics. What I found was sparse, but some articles attribute uneven-ness in the gate structure, causing some charge to move slower.
As for my limited knowledge of Physics, it's still reasonable to think that pulling or pushing out charge carriers would instantaneously collapse/build-up electric field. Not only that, the current must have something similar to a "momentum", even though electrons have extremely low mass.
I really don't have the time to read through all these articles and even if I did, my Physics is lacking. So can anybody just summarize this for me, or point to a shortened article?
Has there been any design of a MOSFET Gate Driver that deals with this issue?
Perhaps what I should've said is "Hysteresis in MOSFET's response time" (or maybe this is still incorrect?). I don't know what's wrong with me tonight. I'm shifting my sleeping schedule, so I already feel groggy.