I'd like to know what's the characteristic curve of Idss in N-Channel MOSFET transistors over different Vds values at high temperature. As I've checked datasheets (like Fairchild's 2N7000 or FDC637BNZ), the Idss parameter is normally specified for Vds voltages very close to BVdss (breakdown voltage). It is clearly stated that current will increase considerably at higher temperatures, but the effect of Vds is not mentioned. I've also read some application notes (like NXP's AN211A or Fairchild's AN-9010) and they do not provide much information about it either.
I have this design where I need to keep Idss within the range of the low µA @ 100°C (the lower, the better), and I've thought I could get away with a transistor that has a much larger BVdss than the working voltage (e.g., BVdss=100V, working voltage=3.3V), but it's unclear if that would be of any effect.
The question is: is the Idss parameter solely dependent of temperature, or the Vds/BVdss ratio would play a role with it?