This is my first experiment with MOSFET. I have built this design but the n-channel MOSFET getting hot. Is there mistakes I have made?

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I have no problems wit p-channel it measured -12V VGS and 200mv VDS, but with n-channel I have measured VGS about 11V and VDS about 4V --- the problem here is that in Multisim simulation VDS should be around 200mV, so from where this 4V come? I want to use this circuit with PWM.

Thank you for any answer.

  • \$\begingroup\$ Is it used with PWM or just a static thing? \$\endgroup\$ – Andy aka May 20 '16 at 10:15
  • \$\begingroup\$ Do both N-Channel FETs measure the same (when they are on)? \$\endgroup\$ – Brian Drummond May 20 '16 at 10:21
  • \$\begingroup\$ Yes, I will use it for PWM \$\endgroup\$ – M.Mosab May 20 '16 at 10:23
  • \$\begingroup\$ P- channel measure: VGS= -12V , VDS= 200mV \$\endgroup\$ – M.Mosab May 20 '16 at 10:23
  • \$\begingroup\$ N=Channel measure: VGS= 12V, VDS= 4V \$\endgroup\$ – M.Mosab May 20 '16 at 10:24

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