This is my first experiment with MOSFET. I have built this design but the n-channel MOSFET getting hot. Is there mistakes I have made?
I have no problems wit p-channel it measured -12V VGS and 200mv VDS, but with n-channel I have measured VGS about 11V and VDS about 4V --- the problem here is that in Multisim simulation VDS should be around 200mV, so from where this 4V come? I want to use this circuit with PWM.
Thank you for any answer.