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I am currently working on the synthesis, with Synopsys' Design Compiler, of an AES encryption module.
In the power reports there are three power categories specified :

  • Switching Power
  • Internal Power
  • Leakage Power

I understand what is the Leakage Power but I can not find out the differences between Internal and Switching power.

Can anybody explain me what are the differences between these two categories?

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Switching power: - The power needed to charge and discharge the capacitance of the gate during activity. It will roughly scale with frequency. This includes the "shoot through" current.

Internal power: - power that is consumed by circuits that have bias circuits or that discharge , for example- dynamic elements (which is separate from leakage power even if it is similar in nature). - This also includes IR drops from power rail routing.

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  • \$\begingroup\$ Thanks for your answer. Do you have any resources about that? \$\endgroup\$ – Krouitch Jun 21 '16 at 9:36

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