I want to add reverse polarity protection to a device which is powered by a single AA battery, so its voltage might go down to 0.8 V. Forward diode is too huge of a drop. I've already thought about adding P-MOSFET but what bothers me is a diode's forward voltage. It's usually around 1 V. What it means is that if battery is inserted the right way, MOSFET won't be open because Vgs is not high enough. As I understand, if after diode voltage is high enough, MOSFET will be opened and diode won't matter anymore. Am I wrong or should I consider other ways to implement reverse polarity protection?
Just to be clear what circuit I'm talking about:
I was considering Si2329DS which has a maximum Vgs of 0.8 V but diode voltage leaves it unusable.
edit: So, I've been doing some research and I've found ideal diode controllers that enable me to use NMOS. I'm going to tell if I find something suitable