I am having great trouble in understanding the operation of transistor in saturation region. This is how I understand the working of a transistor:
In a bipolar junction transistor the width of base is very small, therefore a very small number of carriers undergo recombination inside the base, whereas, the rest of the carriers get conducted through the collector because of the polarity of voltage applied across the collector-base junction.
In this case, electrons flow towards collector because collector is at higher potential than the base. However, when the transistor is being operated in saturation region, the collector-base junction is forward biased i.e. collector is at lower potential than the base. If this is the case, how do the electron flow towards the collector?
Please help me understand this concept as I am experiencing great frustration not being able to understand it.
The original question is here: https://www.physicsforums.com/threads/transistor-in-saturation-region.401308/