I've heard that MOSFETs for high frequency circuits are generally configured as common gate.
Can anyone explain why? Could this be related with the internal MOS capacity?
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In high frequency RF applications one can get around the miller capacitance by using a cascode which uses the common gate configuration.
Also, It behaves different and as more like a current buffer rather than a voltage buffer. On the wiki page you can see how the gain's behave.