This question is about SRAMs, specifically the ISSI IS61WV102416. This is an asynchronous SRAM. To write, we asserted CEn, put the data and address on the signal lines and then toggle the WEn signal high to low and then high. I think that the WEn could be called write strobe though I do not know what strobe generally means in this context.
Rather than toggling the WEn signal each time I put in a new data and address value, what would happen if the WEn is kept low and the address and data are changed simultaneously? I do not know if this will work since in physical hardware there will be a small difference in speed at which they toggle i.e all address and data lines will not change to new state simultaneousl. Therefore, I get the impression that the data may get corrupted in the memory. Is that correct?
I assume that if we don't have to toggle WEn each time new data is to be written, the data writing process shall speed up.