I've been trying to read up on BJT transistors to figure out how I can use one for a simple switching application. In order to calculate the resistances I need, I need to figure out VCE, the collector emitter saturation voltage and VBE, the base emitter voltages. But I'm noticing some of these data sheets seem to have conflicting data the way I am interpreting them.
For example, in this P2N2222A NPN transistor, I can look in the "ON CHARACTERISTICS" table and see that VCE has a max of .3V for IB=15mA and IC=150mA.
Is the datasheet just telling me that at a maximum, the graph will be shifted up so that the value is .3V at IB=15mA? And if so should I expect the general shape of the graph to still hold?