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I am studying the STMicroelectronic BUL216 NPN power transistor. Electrical specification like VCES is given by the Specification Sheet BUL216 Datasheet. Also, the VCEO spec. Both spec has to do with how much high voltage the transistor can withstand before breakdown. Specifications are marked as follow:

  • Symbol - Parameter - Value - Unit
  • VCES - Collector-Emitter Voltage (VBE = 0) 1600 Volts
  • VCEO - Collector-Emitter Voltage (IB = 0) 800 Volts

Technically speaking, what exactly is the difference between VCEO and VCES ?
And what are the exact definitions ?
I also found on the WEB an old Fairchild 1973 Data Book which states that VCES would stand for "Collector to Emitter Saturation Voltage", typically 0.2volt.
Obviously, these two specifications are totally different.
Can anyone clarify those information ? Appreciate your help :)

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https://groups.google.com/forum/#!topic/it.hobby.elettronica/BgDoVBG4cug

" The relative Importance of the VCES and usually VCEO ratings depends on the application. In a half-bridge converter, for instance, the rated VCEO is the dominant factor, whilst in a VCES forward converter is important. Which is most rating Also applicable may depend on Whether to slow laughed network or snubber is applied (see section 1.3.3). "

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breakdown of CollectorBase, with base Open or with base Shorted to Emitter

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