Asynchronous Enable/Standby
When the device is not performing an
operation, the CE# pin is typically driven HIGH and the device enters
standby mode. The memory will enter standby if CE# goes HIGH while
data is being transferred and the device is not busy. This helps
reduce power con- sumption.
The CE# “Don’t Care” operation enables the
NAND Flash to reside on the same asyn- chronous memory bus as other
Flash or SRAM devices. Other devices on the memory bus can then be
accessed while the NAND Flash is busy with internal operations. This
capability is important for designs that require multiple NAND Flash
devices on the same bus.
A HIGH CLE signal indicates that a command
cycle is taking place. A HIGH ALE signal signifies that an ADDRESS
INPUT cycle is occurring.
m69a_2gb_nand.pdf – Rev. H 09/10 EN, page 18