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I want to learn differences between Infrared sensor fabrication and standard CMOS IC fabrication. If I am not wrong, in standard CMOS fabrication Silicon is mostly used. But for infrared spectrum such materials (HgCdTe, InSb and InGaAs ) are preferred.

Thank you,

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Standard CMOS ICs are always based on Silicon. Always. No exceptions. So not "mostly" but always.

Fabrication of an IR sensor is something completely different.

OK, they might uses similar fabrication steps but that will be it. The materials used will be different.

It is also possible to create an IR sensor in CMOS technology. It will have different characteristics than HgCdTe, InSb and InGaAs based sensors though.

But I have yet to see a CMOS IC manufacturing process where HgCdTe, InSb or InGaAs is used. In CMOS fabrication they want to limit the usage of other materials than Silicon as this might cause leaking PN junctions resulting in non-working circuits.

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  • \$\begingroup\$ Hello @Bimpelrekkie, Thank you for reply. I need to learn advantages of InGaAs material over HgCdTe ( and also Si) in the infrared detector fabrication. What is not the enough thing in the HgCdTe ( or Si) that causes the InGaAs material have began to use in infared detector fabrication. \$\endgroup\$ – doner_t Dec 18 '17 at 21:41

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