I am trying to design a single transistor RF power amplifier. For a single transistor amplifier, the voltage at the base/gate of the transistor determines the current through the transistor and ultimately the output power. Then why is power input to the transistor maximized by impedance matching. Why can't impedance bridging be done to increase the voltage at the gate/base of the transistor and hence increase the collector/drain current?
Edit: If your answer is maximum power transfer, I dont understand how impedance matching ensures maximum power transfer. I understand that impedance matching ensures that maximum power enters the transistor but the transistor is not a power amplifier. It is usually a transconductor or a voltage amplifier. How does the output power maximize when the input power is maximized?
Edit again: I realized that this question Why do we care about matching the input impedance of receiving RF amps? is very similar to the one I am asking. The accepted answer there is that maximizing the power input to the amplifier through impedance matching increases the SNR of the input signal thereby increasing the SNR of the output signal too. Is the same argument applicable here too? Is maintaining the SNR of the signal the sole reason to maximize the input power to the amplifier by impedance matching?