In a power electronics device, it seems that silicon carbide (SiC) has a higher variation of electrical on-state resistance with temperature in comparison to silicon (Si). Does anybody know the reason? I googled it, but I did find nothing in this case.
Here is a link that helped me (Page 2 of 6 shows good comparisons): https://www.fairchildsemi.co.jp/Assets/zSystem/documents-archive/collateral/technicalArticle/Overview-of-Silicon-Carbide-Power-Devices.pdf
- Higher band-gap energy variance
- Lower magnetic reluctance
- Higher thermal condcutivity
- Higher hole and electron mobility (more scattering is possible, meaning more variance)