In a power electronics device, it seems that silicon carbide (SiC) has a higher variation of electrical on-state resistance with temperature in comparison to silicon (Si). Does anybody know the reason? I googled it, but I did find nothing in this case.

Here is a link that helped me (Page 2 of 6 shows good comparisons):

To summarize:

  • Higher band-gap energy variance
  • Lower magnetic reluctance
  • Higher thermal condcutivity
  • Higher hole and electron mobility (more scattering is possible, meaning more variance)
  • Thank you for your comment, in the link, it is mentioned: The ON-resistance of the SiC MOSFET increases by about 20 percent when the junction temperature increases from 25°C to 135°C, whereas that of the Si MOSFET increases by 250 percent...... While in datasheets you can find a contrary conclusion. – Mohsen AB Apr 30 at 22:41
  • Of course, I am talking about Si IGBTs and SiC MOSFETs. – Mohsen AB Apr 30 at 23:08

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