In a power electronics device, it seems that silicon carbide (SiC) has a higher variation of electrical on-state resistance with temperature in comparison to silicon (Si). Does anybody know the reason? I googled it, but I did find nothing in this case.

Here is a link that helped me (Page 2 of 6 shows good comparisons): https://www.fairchildsemi.co.jp/Assets/zSystem/documents-archive/collateral/technicalArticle/Overview-of-Silicon-Carbide-Power-Devices.pdf

To summarize:

  • Higher band-gap energy variance
  • Lower magnetic reluctance
  • Higher thermal condcutivity
  • Higher hole and electron mobility (more scattering is possible, meaning more variance)
  • Thank you for your comment, in the link, it is mentioned: The ON-resistance of the SiC MOSFET increases by about 20 percent when the junction temperature increases from 25°C to 135°C, whereas that of the Si MOSFET increases by 250 percent...... While in datasheets you can find a contrary conclusion. – Mohsen AB Apr 30 at 22:41
  • Of course, I am talking about Si IGBTs and SiC MOSFETs. – Mohsen AB Apr 30 at 23:08

Your Answer

 

By clicking "Post Your Answer", you acknowledge that you have read our updated terms of service, privacy policy and cookie policy, and that your continued use of the website is subject to these policies.

Not the answer you're looking for? Browse other questions tagged or ask your own question.