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When injecting a uniform power dissipation in a chip of IGBT power electronics modules by finite element method (FEM) in COMSOL (a good software for thermal analysis), a non-uniform temperature distribution appears in the chip. I mean a uniform power loss injection results in a non-uniform temperature distribution in the chip. I know this is due to thermal conductivity. But, how can I precisely explain the reason for that? I have googled a lot but I could find nothing.

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    \$\begingroup\$ You should probably provide a whole bunch more information if you want an answer. \$\endgroup\$ – Scott Seidman May 14 '18 at 21:56
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    \$\begingroup\$ Power dissipation on a chip is defined by local dissipation of usually non-uniform distribution of switching gates and their clusters. You can't assume nor inject "uniform power", it doesn't make sense. Unless you are not explaining enough of what are you doing. \$\endgroup\$ – Ale..chenski May 14 '18 at 22:01
  • \$\begingroup\$ Silicon is a thermal insulator and metal conduction depends on flow of heat flux to sink \$\endgroup\$ – Sunnyskyguy EE75 May 14 '18 at 23:13
  • \$\begingroup\$ @TonyStewartolderthandirt I am talking about IGBT power electronics modules. \$\endgroup\$ – Mohsen May 14 '18 at 23:17
  • \$\begingroup\$ My guess to what you are searching for is the solution to a "homogenous heat equation". Heat sources may be even along the structure, but temperature distribution is not - it presents a transient state. To improve the clarity of your question, state more firmly that you are talking about simulations. \$\endgroup\$ – Vicente Cunha May 14 '18 at 23:26

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