# GaN saturation current

Exppresion for saturation current in GaN based diodes $$J_{s1}=e[\sqrt\frac{D_n}{\tau_n}\frac{n_i^2}{N_D}+\sqrt\frac{D_p}{\tau_p}\frac{n_i^2}{N_A}]$$ For the simplicity, parameters: $e=10^{-19}, N_D=N_A=10^{16},n_i=10^{-10},D_n=25,D_p=5,\tau_n=\tau_p=10^{-9}$ at room temperature (T = 300K) i get value ~ $10^{-50}A/cm^2$ (too low?), is this the right way to calculate saturation current or am i missing something ?

sorry for my bad english, and thanks in advance

• is e = elementary charge * cross section of device ? May 16, 2018 at 19:26
• No, e just represents elementary charge, Js = Is (saturation current) * S (cross section), sorry i forgot to mention it in first sentence,... saturation current density May 16, 2018 at 20:07

$$I_{s}=qA\left(\sqrt\frac{D_n}{\tau_n}\frac{n_i^2}{N_D}+\sqrt\frac{D_p}{\tau_p}\frac{n_i^2}{N_A}\right)$$