Instrumentation: Hewlett Packard 8116A Pulse/Function Generator stanfor reserch system lock in amplifier SR830 Transistor: Indium Gallium Zink Oxide 320/20
objective: Measure the capacitance of the gate dielectric as a function of VG
Firstly I USED a Source measuring Unit to perfor DC current characterization to verify that the transistor is working correctly.
We then performed a similar scan: with VD=0.1 and VD=5, scanning over VG, to get the transfer characteristics. this one didn't come out as we expected. we expected a clear increase in ID at a certain value of VG, as it starts to conduct.
At this point I wanted to characterize the capacitance that forms between the gate electrode and the channel. We used AC voltage (from the function generator) and applied it to the gate. We had a Source and drain connection going out from which we measured current aplitude and phase (with a current amplifier and a lock in amplifier)
We did this at different DC VOltage offsets because Ctot=Cpar+C and Cpar is not affected by different DC voltages.
i'm not sure how to change the circuit or which symbol represents my transisoro/curicuit better. i hope this is enough detail
I have this set of data, and I need to find the capacitance.
-Amplitude input(V)= 3 -Frequency (kHz)=10 - Offset (V)= -6 +0.4 until 4.1
Amplitude lock =196.48, 197.7 201.1, 209.4, 222.6, 240.2, 268.3, 290.8, 313.7, 334.9, 352.3, 368.6, 366.8, 368.5, 369.5, 370.4, 371, 371.3, 371.7, 372, 372.2, 372.4, 372.5, 372.6, 372.7, 372.8, 372.9, 373, 373.1, 373.2, 373.3, 373.4, 373.5, 373.6, 373.7
Phase (degrees)= -99 basically always +-1
I've never drawn a circuit before, so didnt know how to insert a lock-in. Now, i basically think that the Capacitance can be calculated from Z=1/(CwJ) where i Know W for sure. however i'm not sure about the rest.