There are some nodes with high frequency switching contributing to EMI in Flyback and Forward converters, which should have minimal copper area to minimize the EMI. Here we see the Forward high frequency nodes:
What are the nodes that should have minimal copper area if I move the upper diode on the secondary side to the output negative rail (and also replace it with a FET but that doesn't matter this time I think)? Here is an image of a Flyback, with the mentioned change with the diode:
So the question is: which are the EMI contributing nodes in case of Flyback and Forward converter secondary sides assuming the diode (or synchronous FET) on the negative input rail?