I'm working on a very wide input range for a battery powered application (capability for two different types of chemistries). In the original design, a low side NFET was used as reverse polarity protection. This works, of course, at higher battery levels but when it starts getting lower, Vgs is just simply not high enough to sustain the in-rush currents from the devices being powered.
So I was able to find a low Iq charge pump from LT and was using it somewhere else in the circuit but I thought.. "why not use it to drive the gate of that low side FET as well!" See what I'm talking about below.
So the big question is, any gotchas here that I'm not thinking of? I'm going to have it prototyped up shortly but I figured it would benefit the community if I share my concerns here!