I have a N-MOSFET as power switch like this:
I want to add a fuse on the power line but I have few capacitors on the across the load and I am worried that the inrush current might blow the fuse off. How can I limit the inrush current here? I saw that for P-channel one can add capacitor across drain and gate. I am not sure if this works for N-ch MOSFET as well.
With Nmos ist basically the same...cap between gate and source but an additional high side Driver with a high resistance on ist output and a diode in paralell to the resisor.
simulate this circuit – Schematic created using CircuitLab
In this case a cap between drain and gate would limit the rate at which Vds decreases (i.e., Vload increases). If limiting that voltage ramp will address your inrush current issue, that's the easy route.
TL;DR A high gate resistor value will increase the time it takes to charge the mosfet gate, and so the time it takes for it to turn on.
Found this interesting document about this topic here
2.2. Switching Time and Drive Conditions
Bipolar transistors need a large base current to maintain low on-state voltage. In contrast, since power MOSFETs are voltage-controlled devices, they can be driven just by charging gate capacity, and are therefore a low in power consumption. Note, however, that power MOSFETs have a slightly large input capacitance Ciss. Thus, for high speed switching applications, it is necessary to quickly charge the input capacitance from a low-impedance signal source. Low-impedance drive is required to reduce turn-on time. However, the use of a high gate voltage results in the much charging of gate-source capacitance, resulting in an increase in td (off). Switching time can be controlled via gate resistance. If you want to change the turn-on and turn-off switching speeds separately, you can use diodes to change the gate resistance values for turn-on and turn-off.
