TL;DR A high gate resistor value will increase the time it takes to charge the mosfet gate, and so the time it takes for it to turn on.
Found this interesting document about this topic here
2.2. Switching Time and Drive Conditions
Bipolar transistors need a large base current to maintain low on-state
voltage. In contrast, since power MOSFETs are voltage-controlled
devices, they can be driven just by charging gate capacity, and are
therefore a low in power consumption. Note, however, that power
MOSFETs have a slightly large input capacitance Ciss. Thus, for high
speed switching applications, it is necessary to quickly charge the
input capacitance from a low-impedance signal source. Low-impedance
drive is required to reduce turn-on time. However, the use of a high
gate voltage results in the much charging of gate-source capacitance,
resulting in an increase in td (off). Switching time can be
controlled via gate resistance. If you want to change the turn-on and
turn-off switching speeds separately, you can use diodes to change the
gate resistance values for turn-on and turn-off.