1
\$\begingroup\$

I'm working on small bibliographic research on photovoltaic panels, and I have chemistry background. I have confusion on crystallization (Czochralski method) imposed by the seed and following specific direction (111) or (100, etc.

1-Are all facets of the seed have the same lattice plane, meaning if you want (100) crystal a seed with all facets being (100) must be dipped into the melt?

2- What differences between directions in terms of crystal growing?

3- When crystallization is finished following (100) for example does the pure silicon maintain the original lattice structure of diamond?

enter image description here

4- In the Czochralski process, doping element is added to the melt. Why would the dopant sticks uniformly to the new structure or how to make sure it does that?

I appreciate practical details on direction of growing.

Thank you

\$\endgroup\$
  • 2
    \$\begingroup\$ While the Czochralski process is used in electrical engineering, I'm not sure this is the right site for this question; is there a materials or metallurgical SE? \$\endgroup\$ – Hearth Feb 11 at 16:19
  • 1
    \$\begingroup\$ Re 4. The dopant is homogeneously distributed throughout the melt, and the crystalisation process automatically incorporates it into the lattice structure as the crystal is pulled from the melt. \$\endgroup\$ – Chu Feb 11 at 16:47

Your Answer

By clicking "Post Your Answer", you acknowledge that you have read our updated terms of service, privacy policy and cookie policy, and that your continued use of the website is subject to these policies.

Browse other questions tagged or ask your own question.