I'm working on small bibliographic research on photovoltaic panels, and I have chemistry background. I have confusion on crystallization (Czochralski method) imposed by the seed and following specific direction (111) or (100, etc.
1-Are all facets of the seed have the same lattice plane, meaning if you want (100) crystal a seed with all facets being (100) must be dipped into the melt?
2- What differences between directions in terms of crystal growing?
3- When crystallization is finished following (100) for example does the pure silicon maintain the original lattice structure of diamond?
4- In the Czochralski process, doping element is added to the melt. Why would the dopant sticks uniformly to the new structure or how to make sure it does that?
I appreciate practical details on direction of growing.