This is a newbie question on MOSFET structure. If I need a heat sink to be attached to MOSFET, it should be closer to the source of heat. Here channel is the source of heat. Hence heat sink should be either to drain or source.
The bulk area of the body (substrate) has nothing to do with heat dissipation. Is it correct?
My confusion arises because we say collector is made larger for better heat dissipation in BJT and in Power MOSFET drain is made larger for better thermal management.