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Can somebody please describe the way that NMOS transistor layers:

  1. DIFF
  2. POLY1
  3. NIMP
  4. PIMP

are related to the cross section of it?

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    \$\begingroup\$ Do you know what DIFF, NIMP, and PIMP are abbreviations for? Do you know what POLY is? Your question seems to be very broad, can you be more specific? \$\endgroup\$ Aug 17, 2019 at 20:37
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    \$\begingroup\$ slideserve.com/thane/chapter-5-elements-of-physical-design \$\endgroup\$ Aug 18, 2019 at 3:10
  • \$\begingroup\$ Smells like homework to me. That said, it's a bit of a trick question as there is no P-implant in the diagram. I leave up to the OP to figure out why. \$\endgroup\$ Aug 18, 2019 at 21:21

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The layers that you list look like abbreviations from a CAD system as such they mean what they are defined to mean within the technology description defined for that process.

However if I had to take a stab at this:-

  1. DIFF is diffusion the whole lightly doped yellow area that forms the substrate.

  2. POLY1 is the Polysilicon area which forms the black bit the gate.

  3. NIMP N+ type implant is the source and drain regions colored purple on your diagram.

  4. PIMP Would be P+ implant which would be used for P channel transistor source and drain this is not shown on your diagram.

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    \$\begingroup\$ The substrate is not diffused, it is doped when the silicon ingot is pulled. This gives uniform doping through the thickness of the wafer. \$\endgroup\$ Aug 18, 2019 at 13:13

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