I want to create an ENABLE signal driving a Murata OKI-T/3-W32P-C DC-DC converter, where the P stands for Positive Polarity of the On/Off Control line: the line has an internal pull-up, which means that the converter is on when the Control line is open or high, and off when pulled to GND.
From what I read online, the easiest way to turn this setup into an ENABLE signal would be to use a depletion-type MOSFET, but I understand that these are rarely used? Or are there depletion-type MOSFETs that are generally recommended just like 2N7000 and other general-purpose transistors?
If not, what would be the right way to go here? connecting the DISABLE signal to Vin using a pull-up resistor, and add another transistor at the low side to pull down the DISABLE signal when the ENABLE signal is activated?
Which leaves me with the question whether this is the general way to go, or whether the MOSFET-based solution can/should be used when Vin is not as high as 32V:
In the datasheet for this OKI-T/3-W32P-C module I see that there is simply a switch symbol. But in the datasheet for the ABB ABXS002A3X41-SRZ module (fig. 27 on page 11), for example, there is a N-channel/enhanced MOSFET in the circuit. Is that because the max Vin in this case is only 16V? which means that a 2N7000 could be used directly here, as its max Vgs is 20V continuous?
Similar thing in the datasheet for the Murata OKL-T/6-W12 module: Fig. 7 on page 15 shows the P-channel/depletion setup (for a module with negative logic) that I initially thought I could use. This module has a max Vin of 14V, so in this case a MOSFET would be able to handle it without level shifting? And if so, what transistor would be a good candidate?