Hi I'm studying semiconductor and i got stuck in the concept of MOSFET. In the case of pao-sah's model, we set our electron concentration and hole concentration as following pictures that I attached.enter image description here

I wonder why there is no V factor in hole concentration formula. I think reason of this as a quasi fermi level issue, but I cannot think further anymore.

I'd be grateful if somebody give me a solution. Thank you in advance!

  • \$\begingroup\$ what is the V factor? Is the "V" the gate voltage? \$\endgroup\$ – analogsystemsrf Oct 6 at 1:51
  • \$\begingroup\$ Yes ,but accurately it is a voltage across the channel in the y axis V(y). \$\endgroup\$ – JoonHalee Oct 6 at 8:28
  • \$\begingroup\$ If P(x,y) is the bulk carrier density, how can that be made to vary unless a voltage gradient be imposed? There can be a gradient right at the surface under the gate, and that is where the Channel is formed. Thus this math is for Nchannel? \$\endgroup\$ – analogsystemsrf Oct 6 at 14:00
  • \$\begingroup\$ sorry for the delay, yes it is Nchannel MOSFET! \$\endgroup\$ – JoonHalee Oct 7 at 0:19

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