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I am working on simple precision current source figure below, I need figure out how to choose correct Opamp and Mosfet to have most accurate result (Linear).

So how do I calculate (or choose) Opamp and Mosfet requirement , to be able to get 1nA to 1uA.

enter image description here enter image description here Green Is current and Red is input voltage

The R1 value could be change (Iout = Vin/R1) but I am more interested on linearity and choosing correct Opamp and Mosfet.

Vin = 0-3V variable (From DAC)

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  • \$\begingroup\$ Product recommendations are off topic here and aren't useful to future readers. \$\endgroup\$
    – DKNguyen
    Oct 31, 2019 at 17:22
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    \$\begingroup\$ I am not looking for product recommendation I am looking for, how do I calculate these requirements for opamp and Mosfet. \$\endgroup\$
    – Shahreza
    Oct 31, 2019 at 17:26
  • \$\begingroup\$ What Vout range is required and Io vs Vin specs? Then why assume this is the best way to meet your specs? \$\endgroup\$ Oct 31, 2019 at 17:28
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    \$\begingroup\$ I don't think you need the pass transistor. It's only 10uA max and it's also running off 3.3 V just like the op-amp so it's not really doing anything that the op-amp couldn't be doing on its own. \$\endgroup\$
    – DKNguyen
    Oct 31, 2019 at 17:45
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    \$\begingroup\$ Choose an opamp whose combined error of input offset voltage and input bias current (into the load resistor) produces a voltage error across the load resistor of less than 1 % When trying to produce 10 nA. Report what you calculate that to be. Then try and find a MOSFET that has a leakage current that is very, very, very, very small. Good luck. You’ll find that you will likely be better off using a BJT although it might still be flaky. \$\endgroup\$
    – Andy aka
    Oct 31, 2019 at 17:53

1 Answer 1

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The load circuit is probably a PRT or BJT for measuring temperature. Thus you don't want to drive the long leads to the sensor and back to the inverting input of the op-amp, it will oscillate. By using a MOSFET, you decouple the feed back making it stabile. The op-amp is easy. The hard part is finding a MOSFET with very low leakage over temperature. A low Vth is typically 0.45V @ 250uA. Remember, we want the MOSFET in the saturated region (Vds > Vgs). So what's happening at 10nA? We don't know, no specs are given at that low of a current. The BJT will have a very low Beta at that current level and thus will be very inaccurate. The sense resistor has iC+iB, so the load current will be iB less than iC. The required accuracy for a DT-670 silicon temperature sensor is 10uA +/- 0.1% (My problem). Also 10Meg ohms requires, clean boards with no contamination.

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