# Is it possible to reduce the Miller's plateau voltage?

Consider the following circuit:

Image source: Simplified Clamped Inductive Switching Model - Figure 3 from "Fundamentals of MOSFET and IGBT Gate Drive Circuits by Texas Instruments"

I would like to improve the turn on speed of a MOSFET/IGBT. To do this, I think about reducing the Miller's plateau voltage in order to have a higher voltage between the driver (output high) and Vgs in order to charge Ciss more rapidly. And so reducing the Miller's plateau time.

However I do not know if it is possible to reduce the Miller's plateau voltage. The Miller's plateau begins when the drain voltage begins to decrease, i.e. when the diode stop conducting. So how to stop the conduction of the diode faster? A diode with low reverse recovery time would be the solution? Did I make a mistake? Is this wrong? Have you other recommendations/advice? More generally, is this a good idea to reduce the Miller's plateau?

• But the plateau voltage is not constant and it will depend on the drain current. – G36 Jan 1 at 16:34
• Isn't the plateau voltage essentially equal to the threshold voltage? I.e., the point at which the charge in the channel begins to increase sharply, requiring a corresponding increase in gate charge. – Dave Tweed Jan 1 at 17:01
• Thank you for your answers. The plateau voltage is theoritically constant in function of the time and is nearly constant in practice. It may depends on the drain current as the drain current is equal to the inductance current (source current) and the reverse recovery time depends on it. The miller pleateau is not equal to the thresold voltage. More informations can be found in the document "Fundamentals of MOSFET and IGBT gate drive circuit" written by TI – Jess Jan 1 at 17:49