Consider the following circuit:
Image source: Simplified Clamped Inductive Switching Model - Figure 3 from "Fundamentals of MOSFET and IGBT Gate Drive Circuits by Texas Instruments"
I would like to improve the turn on speed of a MOSFET/IGBT. To do this, I think about reducing the Miller's plateau voltage in order to have a higher voltage between the driver (output high) and Vgs in order to charge Ciss more rapidly. And so reducing the Miller's plateau time.
However I do not know if it is possible to reduce the Miller's plateau voltage. The Miller's plateau begins when the drain voltage begins to decrease, i.e. when the diode stop conducting. So how to stop the conduction of the diode faster? A diode with low reverse recovery time would be the solution? Did I make a mistake? Is this wrong? Have you other recommendations/advice? More generally, is this a good idea to reduce the Miller's plateau?