I need to eliminate main switch bouncing, which badly influences my device. In order to achieve that, I want to use a delayed start with N-MOSFET an RC circuit at the gate. MOSFET I've chosen have a very low gate threshold voltage of 1.05V and very low Rds (csat Vgs 2.5V it is less then 50 mOhm). My calculations suggest, that at the selected values for R1 and C1, 1.05V at the gate will appear at approximately 90 ms, which is well beyond any bouncing of the main switch. I'm using this formula: \$t = -R\cdot\!C\cdot\ln(1-\frac{V_0}{V})\$
At start up load draws no more then 150 mA. Did I miss something?
EDIT: I was suggested to add a discharge path for the C1 in order to ensure that gate is not driven high when the circuit is off. I planned to add a 12V Zener at the M1 gate, will it be sufficient to discharge C1?
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