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From my limited knowledge, the only advantage of providing a parallel path through diode with a lower resistance across the main gate resistance is the high speed turn off of the power electronic device. Is there anything else behind this kind of design?High side driver section

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To have different rise and fall times. These are usually different in a MOSFET anyways and you have shoot-through to worry about if two MOSFETs are stacked like in a half-bridge.

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  • \$\begingroup\$ So are we trying to make them equal? \$\endgroup\$ – Vivek Vijayan Feb 3 at 16:08
  • \$\begingroup\$ @VivekVijayan Or make it turn off faster than it turns on for shoot-through reasons, as you can see in your schematic: 10R for discharge but 100R for charge \$\endgroup\$ – DKNguyen Feb 3 at 16:16
  • \$\begingroup\$ Sometimes it's good to turn one FET off before turning the other one on... This is one way to accomplish that, but not the best. I would check the driver IC to look at its dead time options. \$\endgroup\$ – Brian Drummond Feb 3 at 16:17

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