From my limited knowledge, the only advantage of providing a parallel path through diode with a lower resistance across the main gate resistance is the high speed turn off of the power electronic device. Is there anything else behind this kind of design?High side driver section


To have different rise and fall times. These are usually different in a MOSFET anyways and you have shoot-through to worry about if two MOSFETs are stacked like in a half-bridge.

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  • \$\begingroup\$ So are we trying to make them equal? \$\endgroup\$ – Vivek Vijayan Feb 3 at 16:08
  • \$\begingroup\$ @VivekVijayan Or make it turn off faster than it turns on for shoot-through reasons, as you can see in your schematic: 10R for discharge but 100R for charge \$\endgroup\$ – DKNguyen Feb 3 at 16:16
  • \$\begingroup\$ Sometimes it's good to turn one FET off before turning the other one on... This is one way to accomplish that, but not the best. I would check the driver IC to look at its dead time options. \$\endgroup\$ – Brian Drummond Feb 3 at 16:17

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