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It takes longer for a BJT device to come out of saturation than a MOS device to come out of triode region. It is explained by the base charge storage time, the charge has to recombine and go back to emitter and collector at the same time. Isn't this the case for MOS devices too? The charge in the channel has to go back to source and drain. What is the cause of BJTs being slower to come out of saturation than MOSFETs?

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  • \$\begingroup\$ Are you aware that BJT saturation is nothing like the same as MOSFET saturation regions? \$\endgroup\$ – Andy aka Mar 20 at 11:27
  • \$\begingroup\$ What Andy said - plus the statement is far too general. Bipolar devices are available that work in the GHz range. For high power high voltage high speed switching in the 0.1-1 Mhz range hydrid IGBT's with a bipolar power switch and MOSFET input are commonly used. \$\endgroup\$ – Russell McMahon Mar 20 at 11:29
  • \$\begingroup\$ Sorry for the misuse of the terms. I mean why is typical BJT slower to come out of saturation than a MOSFET to come out of triode? \$\endgroup\$ – Bran Tran Mar 20 at 11:31
  • \$\begingroup\$ Collector-base reverse recovery time (a diode effect). There is no equivalent diode problem in a MOSFET in triode region. \$\endgroup\$ – Andy aka Mar 20 at 11:46

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