Hello I would like to add a high side switch for my circuit. Typically a physical switch can do this job but due to form factor restraints the switches that are rated for my application does not meet the cut. To mitigate this is to use a MOSFET along side a lower power rated switch that meets the size limitation.
Usually you use a P-Channel MOSFET for highside switching but im having trouble looking for a part that meets the specifications in my supplier (3.3v ON 10+V 5-10A PMOS are not that common it seems). N channel MOSFETS on the other hand has a lot more of variety, but typically they are used for low side switching.
Is it possible to use an NMOS as a highside switch ? what are the disadvantages?
In my circuit i have a Reverse voltag protection IC that controls an NMOS on the highside. This makes me think that it is possible. I will just use the same NMOS for the physical switch as the one i will use for the RVP in series.
You might say why not integrate the physical switch to the NMOS in RVP, that seems to not possible as discussed here. The circuit would now look something like this.
I have found a document from texas instrument which is very interesting contains parts which could have everything in my circuit be contained in a single ic. On page 4 contains a list of features that i would want. what cought my attention is this ic TPS25942 it is a high side switch with reverse voltage protection and just requires minimal passives. What is important is i has an enable (EN) pin wich can be used by a physical switch