It does not look right to me.
You have 3 Volt logic levels going in with a diode drop and you assumed 0V drop. The spec is 1.25V typ @3mA which drops slightly with lower current and visaversa.
Thus 3.3V input, If= (3.3-1.2)/1.8K = 1.2mA which is near the abslute minimum of 1mA where CTR drops below rated specs. Above 1mA is however linear. But your output CTR is 65% to 300% depending on part number. Since this includes beta of transistor it is very wide tolerance compared to optoisolators with just photodiodes. Let's assume 150% in the middle of the range for now. Thus Iout= 1.2*1.5 = 1.8mA across 100 ohm= 180 mV.
What interface requirements do you have on the output?
You can excellent CMMR and 1500V isolation with a floating optoisolator but your voltage range has gone from 3.3V to 180 mV. You can increase with Re which increase Vout but it also affects risetime for which Olin has advised you correctly to beware how this affects your commutation with PWM.
Opto-isolators are great but not so fast unless you choose parts wisely. Even if you get 150% CTR , there is a huge tradeoff for bandwidth and voltage gain.
Generally if you want highest speed but significant loss in voltage gain, use emitter follower mode. If you want voltage gain, then use common emitter with the obvious inverted logic output.
Best bet is use Common mode ferrite choke around the cable bundle without optoisolator
use optoisolators with logic level output tend to be very expensive but very high speed (<<1us).
Do a noise and timing analysis on commutation of PWM signals with shoot-thru effects and consider what drivers you need.