I am currently in the process of designing my first transistor circuit and I am using another as a basis to work off of. In this process I am trying to learn how to read a datasheet, as in university so far, we have rarely used them. I am using a 2N5089 NPN transistor for my design and below I have posted the part of the datasheet in question. First, what exactly is Base-Emitter On voltage? I think this means the voltage required to forward bias the BE junction, but I figure this would be a minimum value, not a maximum. Secondly, why does the hFE for the first scenario have a maximum value, but the other two do not (just hyphens)? Finally, is V_CE of 5.0 V a good bias point? The design I am basing off of, when simulated with a generic NPN, gives a V_CE of roughly 5V, so this makes me think so.
The final picture is the DC analysis of the amplifier I am working on in case it helps. I used 800 A/A as it is the average of 400 and 1200.