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As we know in normal p-n junctions is formed by doping on a single semiconductor so that material continuity is maintained which facilitates the movement of charge carriers between two regions. But in case of metal-semiconductor junction, there wont be any material continuity as metal is deposited over the silicon substrate. Then how electrons movement takes place??

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    \$\begingroup\$ Why do you think that there won't be "material continuity"? Also, what do you exactly mean by that? Metal can be deposited on silicon in a number of ways, and you do have material continuity... \$\endgroup\$ May 18, 2020 at 6:57
  • \$\begingroup\$ yes, actually that's where i made mistake in thinking. Deposition is a chemical process and continuity will be there anyhow. Thanks Vladimir. \$\endgroup\$ May 18, 2020 at 13:29

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The Fermi levels of both materials have to be equal, which will cause some band bending of the semiconductor at the interface - this will lead to a gradient for enabling electron movement.

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